As designs transition from 130nm to 90nm and below, designers must consider manufacturing effects early in the design cycle. Shrinking design nodes, larger designs, and expanding design complexity ...

There are have been numerous papers written on the techniques that can be employed during integrated circuit (IC) design to achieve better overall manufacturability and yield. These ...

In moving to nanometer process technologies at 130 nm and below, semiconductor designers face a variety of physical and electrical effects that can significantly degrade circuit performance. For these ...

Diagnosis-driven yield analysis identifies the cause of systematic yield loss to speed yield ramp on new processes and improves yield on mature processes. Finding the root cause of yield loss is ...